Having received his bachelor of science degree in electrical engineering from Lehigh University, Richard Busch of Austin, Texas, has more than 30 years of semiconductor electrical engineering development experience. As vice-president of intellectual property strategy and product line management at Globalfoundries, Inc., in Austin, Texas, Richard Busch recently helped develop the company’s IP portfolio with leading third party IP providers worldwide.
Established in 2009, Globalfoundries is the first trly worldwide manufacturing company to produce semiconductors while providing engineering excellence, technological advancement, and global marketing. One of Globalfoundries’ differentiated offerings is fully depleted silicon on insulator technology (FD-SOI). FD-SOI is a technological process dependent upon combining the use of an ultra-thin insulating layer called buried oxide positioned above a silicon base with an extra thin silicon film upon which transistors are built. The combination of the thin buried oxide insulating layer with the thin silicon film transistor is called ultra-thin body and buried oxide fully depleted silicon on insulator. Since the buried oxide layer reduces the loss of electrical transfer between the initial transistor source and the drain destination by confining electron flow, FD-SOI is more efficient than bulk technologies, due to the reduction of current leakage. Fully depleted silicon on insulator technology allows for a more efficient and cost effective electrostatic transistor when compared to traditional methods.
Established in 2009, Globalfoundries is the first trly worldwide manufacturing company to produce semiconductors while providing engineering excellence, technological advancement, and global marketing. One of Globalfoundries’ differentiated offerings is fully depleted silicon on insulator technology (FD-SOI). FD-SOI is a technological process dependent upon combining the use of an ultra-thin insulating layer called buried oxide positioned above a silicon base with an extra thin silicon film upon which transistors are built. The combination of the thin buried oxide insulating layer with the thin silicon film transistor is called ultra-thin body and buried oxide fully depleted silicon on insulator. Since the buried oxide layer reduces the loss of electrical transfer between the initial transistor source and the drain destination by confining electron flow, FD-SOI is more efficient than bulk technologies, due to the reduction of current leakage. Fully depleted silicon on insulator technology allows for a more efficient and cost effective electrostatic transistor when compared to traditional methods.
